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SamsungPatent applicationMaterials & manufacturingInterest 3/10

Samsung patents gas cleanup system for chip factories

Samsung describes a system that cleans exhaust gases from two different chip-making chambers. It uses a fluidized bed reactor with a circulating catalyst to treat one gas stream, while a separate burner handles another stream before both pass through a scrubber.

Why it mattersThis improves how factories manage waste gases during semiconductor production, which is a standard part of manufacturing infrastructure.

In the filing’s own words

A semiconductor process system includes a first process chamber configured to perform a first process on a substrate, a second process chamber configured to perform a second process different from the first process, and a gas treatment system configured to treat a first gas exhausted from the first process chamber and a second gas exhausted from the second process chamber, where the gas treatment system includes a catalytic reactor connected to the first process chamber, and configured to treat the first gas exhausted from the first process chamber, a scrubber connected to the catalytic reactor, and configured to treat the first gas and the second gas passing through the catalytic reactor and a combustion apparatus connected to the second process chamber, and configured to burn the second gas exhausted from the second process chamber.

What exactly they claim (claim 1)

1. A semiconductor process system, comprising: a first process chamber configured to perform a first process on a substrate; a second process chamber configured to perform a second process different from the first process; and a gas treatment system configured to treat a first gas exhausted from the first process chamber and a second gas exhausted from the second process chamber, wherein the gas treatment system comprises: a catalytic reactor connected to the first process chamber, and configured to treat the first gas exhausted from the first process chamber; a scrubber connected to the catalytic reactor, and configured to treat the first gas and the second gas passing through the catalytic reactor; and a combustion apparatus connected to the second process chamber, and configured to burn the second gas exhausted from the second process chamber, wherein the catalytic reactor comprises a fluidizing catalytic bed reactor, a catalyst flow member configured to provide a catalytic flow space, a catalyst supply line configured to supply a first catalyst to the catalyst flow member, a catalyst exhaust line configured to exhaust the first catalyst from the catalytic flow space, a catalyst mixing apparatus configured to receive the exhausted first catalyst and mix the exhausted first catalyst with a second catalyst to generate a mixed catalyst, and a catalyst supply apparatus configured to receive the mixed catalyst and supply the mixed catalyst to the catalyst supply line, and wherein the combustion apparatus is connected to the catalytic reactor such that the second gas exhausted from the second process chamber is introduced to the catalytic reactor through the combustion apparatus.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
GAS TREATMENT SYSTEM, SEMICONDUCTOR PROCESS SYSTEM INCLUDING THE SAME, AND GAS TREATMENT METHOD USING THE SAME
Publication number
US20260264013A1
Application number
19662826
Filed
Apr 29, 2026
Published
Sep 10, 2026
Inventors
5
Claims
20

Classified under

B01D 53/885 Operations & transportB01D 53/869 Operations & transportH10P 72/0421 Electricity & electronicsB01D 2255/9032 Operations & transportB01D 2258/0216 Operations & transport
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.