Samsung patents memory chip design with built-in signal boosters
Samsung has filed a patent for a semiconductor memory package that stacks multiple memory chips on a base substrate. The design includes a specific buffer circuit inside the chip that strengthens signals as they move between different parts of the memory, ensuring data is transmitted more reliably.
In the filing’s own words
A semiconductor memory package includes a base substrate connected to a memory controller and a plurality of semiconductor memory chips stacked on the base substrate, where a first semiconductor memory chip of the plurality of semiconductor memory chips includes a first normal chip pad, a first buffering chip pad, an internal circuit connected to the first normal chip pad, the internal circuit including a memory cell array and a peripheral circuit configured to control the memory cell array and a buffer circuit connected between the first normal chip pad and the first buffering chip pad, the buffer circuit being configured to reinforce a signal transferred between the first normal chip pad and the first buffering chip pad.
What exactly they claim (claim 1)
1. A semiconductor memory package comprising: a base substrate connected to a memory controller; and a plurality of semiconductor memory chips stacked on the base substrate, wherein a first semiconductor memory chip of the plurality of semiconductor memory chips comprises: a first normal chip pad; a first buffering chip pad; an internal circuit connected to the first normal chip pad, the internal circuit comprising a memory cell array and a peripheral circuit configured to control the memory cell array; and a buffer circuit connected between the first normal chip pad and the first buffering chip pad, the buffer circuit being configured to reinforce a signal transferred between the first normal chip pad and the first buffering chip pad.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR MEMORY PACKAGE INCLUDING SEMICONDUCTOR MEMORY CHIP HAVING INTERNAL CIRCUIT AND BUFFER CIRCUIT, AND STORAGE DEVICE INCLUDING THE SAME
- Publication number
- US20260334330A1
- Application number
- 19549931
- Filed
- Feb 25, 2026
- Published
- Oct 22, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10W 90/24 Electricity & electronicsG11C 7/1057 Physics & computingG11C 7/1084 Physics & computingH10B 80/00 Electricity & electronicsH10D 80/30 Electricity & electronicsH10W 72/5473 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.