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Samsung patents chip design with uneven spacing between internal layers

Patent drawing
Patent drawing from the official filing.

Samsung has filed a patent for a semiconductor device where the gaps between stacked internal layers are not uniform. Specifically, the space between the base and the first layer is smaller than the space between the first and second layers.

Why it mattersThis is a routine hardware design tweak that may help engineers optimize how electricity flows through the chip's tiny components.

In the filing’s own words

The present invention provides a semiconductor device. The semiconductor device includes a well region in a substrate, a multi-channel layer on the well region, and the multi-channel layer including first, second, and third channel layers sequentially stacked in a vertical direction and apart from one another, a first gate insulating layer between the first channel layer and the well region, and a gate electrode overlapping the multi-channel layer. The gate electrode includes a first inner electrode between the first channel layer and the second channel layer, and an outer electrode on the third channel layer. An interval between the well region and the first channel layer is less than an interval between the first channel layer and the second channel layer.

What exactly they claim (claim 1)

1. A semiconductor device, comprising: a well region in a substrate; a multi-channel layer on the well region, the multi-channel layer including first, second, and third channel layers sequentially stacked in a vertical direction and spaced apart from one another; a first gate insulating layer between the first channel layer and the well region; and a gate electrode overlapping the multi-channel layer, wherein the gate electrode comprises: an inner electrode between the first channel layer and the second channel layer; and an outer electrode on the third channel layer, and wherein an interval between the well region and the first channel layer is less than an interval between the first channel layer and the second channel layer.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
SEMICONDUCTOR DEVICE HAVING DIFFERENT INTERVALS BETWEEN CHANNEL LAYERS
Publication number
US20260333857A1
Application number
19424767
Filed
Dec 18, 2025
Published
Oct 22, 2026
Inventors
4
Claims
20

Classified under

H10D 84/851 Electricity & electronicsH10D 30/481 Electricity & electronicsH10D 30/503 Electricity & electronicsH10D 30/506 Electricity & electronicsH10D 62/102 Electricity & electronicsH10D 62/151 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.