Samsung patents silicon carbide chip with mixed-material buffer layer
Samsung describes a semiconductor device made from silicon carbide (SiC) that uses a specific buffer layer to support the active components. This buffer layer contains a mix of silicon and other materials, with silicon making up between 10% and 50% of the atoms in that section.
In the filing’s own words
An example semiconductor device is a SiC semiconductor device, including a buffer layer, a first conductivity type semiconductor layer on a first surface of the buffer layer, a second conductivity type well region in the first conductivity type semiconductor layer, a first conductivity type well region in the second conductivity type well region, a gate electrode adjacent to the second conductivity type well region, a gate insulating layer between the gate electrode and the second conductivity type well region, a first electrode on the first conductivity type well region, and a second electrode on a second surface of the buffer layer, the second surface being opposite the first surface. The buffer layer includes a first buffer layer including a first element homologous to Si, and, in the first buffer layer, the content of the first element is 10 at% to 50 at%.
What exactly they claim (claim 1)
1. An SiC semiconductor device comprising: a buffer layer, a first conductivity type semiconductor layer on a first surface of the buffer layer, a second conductivity type well region in the first conductivity type semiconductor layer, a first conductivity type well region in the second conductivity type well region, a gate electrode adjacent to the second conductivity type well region, a gate insulating layer between the gate electrode and the second conductivity type well region, a first electrode on the first conductivity type well region, and a second electrode on a second surface of the buffer layer, the second surface being opposite to the first surface, wherein the buffer layer includes a first buffer layer, the first buffer layer including a first element homologous to Si, and wherein a content of the first element in the first buffer layer is 10 at% to 50 at%.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE INCLUDING A BUFFER LAYER
- Publication number
- US20260333810A1
- Application number
- 19384252
- Filed
- Nov 10, 2025
- Published
- Oct 22, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10D 62/822 Electricity & electronicsH10D 30/0297 Electricity & electronicsH10D 30/668 Electricity & electronicsH10D 30/831 Electricity & electronicsH10D 62/111 Electricity & electronicsH10D 62/8325 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.