Samsung patents semiconductor design using stacked superlattice layers
Samsung describes a semiconductor device that places a specific structure called a superlattice between two main semiconductor layers. This superlattice is made of stacked layers with different energy properties, which helps control how electricity flows through the device.
In the filing’s own words
A semiconductor device includes a first semiconductor layer having a first conductivity type, at least one unit superlattice structure stacked on the first semiconductor layer, a second semiconductor layer on the unit superlattice structure, a doped well region having a second conductivity type in the second semiconductor layer, a first doped layer having the first conductivity type in the doped well region, a gate electrode adjacent to the doped well region, a gate insulating layer between the doped well region and the gate electrode, a first electrode on the first doped layer, and a second electrode below the first semiconductor layer. The unit superlattice structure includes a first superlattice layer and a second superlattice layer on the first superlattice layer, and an energy band gap of the first superlattice layer is different from an energy band gap of the first semiconductor layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a first semiconductor layer having a first conductivity type, at least one unit superlattice structure on the first semiconductor layer, a second semiconductor layer on the at least one unit superlattice structure, a doped well region having a second conductivity type in the second semiconductor layer, a first doped layer having the first conductivity type in the doped well region, a gate electrode adjacent to the doped well region, a gate insulating layer between the doped well region and the gate electrode, a first electrode on the first doped layer, and a second electrode below a lower surface of the first semiconductor layer, wherein the at least one unit superlattice structure includes: a first superlattice layer, and a second superlattice layer on the first superlattice layer, wherein an energy band gap of the first superlattice layer is different from an energy band gap of the first semiconductor layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE
- Publication number
- US20260333807A1
- Application number
- 19383168
- Filed
- Nov 7, 2025
- Published
- Oct 22, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10D 62/8164 Electricity & electronicsH10D 12/481 Electricity & electronicsH10D 30/66 Electricity & electronicsH10D 62/60 Electricity & electronicsH10D 62/8325 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.