Samsung patents layered gate structure for integrated circuits
Samsung describes a method for building an integrated circuit with a specific arrangement of gate materials. The design uses two layers of insulating film around the gate electrode, with one layer positioned higher than the gate's top surface.
In the filing’s own words
An integrated circuit (IC) device is provided. The IC device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second portion being apart from the channel region; and a second gate dielectric film including a third portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate.
What exactly they claim (claim 1)
1. A method of manufacturing an integrated circuit device, the method comprising: forming a channel region on a substrate; forming a first gate dielectric film covering the channel region, the first gate dielectric film comprising a first portion and a second portion, the first portion being in contact with the channel region, and the second portion being apart from the channel region; forming a gate on the first gate dielectric film, the gate being in contact with the first portion of the first gate dielectric film; forming a second gate dielectric film covering the gate and the first gate dielectric film, the second gate dielectric film comprising a third portion and a fourth portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate, and the fourth portion facing the channel region with the gate between the fourth portion and the channel region in a vertical direction.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- INTEGRATED CIRCUIT DEVICE
- Publication number
- US20260333793A1
- Application number
- 19724202
- Filed
- Jun 29, 2026
- Published
- Oct 22, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10D 62/121 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 84/853 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.