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Samsung patents stacked memory design with new wiring path

Patent drawing
Patent drawing from the official filing.

Samsung describes a non-volatile memory chip where the main storage cells are stacked vertically above a base layer. The design includes a specific wiring path, or via, that connects the lower circuitry to the storage area by passing through an insulating layer.

Why it mattersThis is a routine improvement to how memory chips are physically built, potentially allowing for denser or more efficient storage components in future devices.

In the filing’s own words

A non-volatile memory device may include a memory cell region including a common source plate, a plurality of gate electrodes stacked on the common source plate in a vertical direction, and a plurality of channel structures extending in the vertical direction on the common source plate; and a peripheral circuit region overlapping the memory cell region in the vertical direction. The peripheral circuit region may include: a lower substrate, a lower insulation layer on the lower substrate, a capping layer over the lower insulation layer, and at least one via penetrating through the capping layer, and wherein at least a portion of the at least one via is disposed between the capping layer and the common source plate.

What exactly they claim (claim 1)

1. A non-volatile memory device comprising: a memory cell region including a common source plate, a plurality of gate electrodes stacked on the common source plate in a vertical direction, and a plurality of channel structures extending in the vertical direction on the common source plate; and a peripheral circuit region overlapping the memory cell region in the vertical direction, wherein the peripheral circuit region includes: a lower substrate, a lower insulation layer on the lower substrate, a capping layer over the lower insulation layer, and at least one via penetrating through the capping layer, and wherein at least a portion of the at least one via is disposed between the capping layer and the common source plate.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
NON-VOLATILE MEMORY DEVICE
Publication number
US20260333700A1
Application number
19730348
Filed
Jul 2, 2026
Published
Oct 22, 2026
Inventors
11
Claims
20

Classified under

H10B 43/27 Electricity & electronicsH10B 41/27 Electricity & electronicsH10B 41/41 Electricity & electronicsH10B 43/40 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.