Samsung patents stacked image sensor using fin-shaped transistors
Samsung describes an image sensor design where the pixel grid and the circuitry that converts light signals into digital data are placed on two separate chips stacked on top of each other. The conversion circuitry uses fin field-effect transistors, which are tiny transistors with a fin-shaped structure, arranged so the fins run perpendicular to the spacing between the converters.
In the filing’s own words
An image sensor includes a first chip including a pixel array comprising a plurality of pixels, and a second chip including a plurality of column parallel analog-to-digital converters (ADCs) configured to process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, each of the plurality of column parallel ADCs is spaced apart from each other in a first direction in plan view, the plurality of column parallel ADCs are implemented with a first plurality of fin field-effect transistors (FinFETs), each of the first plurality of FinFETs includes at least one fin as a channel structure, and the channel structure of each of the first plurality of FinFETs extends in a second direction perpendicular to the first direction in plan view.
What exactly they claim (claim 1)
1. An image sensor comprising: a first chip comprising a pixel array comprising a plurality of pixels; and a second chip comprising a plurality of column parallel analog-to-digital converters (ADCs) configured to process a pixel signal output from the pixel array; wherein the first chip and the second chip are stacked, wherein each of the plurality of column parallel ADCs is spaced apart from each other in a first direction in plan view, wherein the plurality of column parallel ADCs are implemented with a first plurality of fin field-effect transistors (FinFETs), wherein each of the first plurality of FinFETs comprises at least one fin as a channel structure, and wherein the channel structure of each of the first plurality of FinFETs extends in a second direction perpendicular to the first direction in plan view.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- IMAGE SENSOR INCLUDING FIELD-EFFECT TRANSISTORS
- Publication number
- US20260332919A1
- Application number
- 19724112
- Filed
- Jun 29, 2026
- Published
- Oct 22, 2026
- Inventors
- 7
- Claims
- 19
Classified under
H04N 25/79 Electricity & electronicsH04N 25/78 Electricity & electronicsH10F 39/80373 Electricity & electronicsH04N 25/60 Electricity & electronicsH10D 30/62 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.