/Patent Tracker
SamsungPatent applicationChips & hardwareInterest 3/10

Samsung patents memory design that isolates unused data paths during reads

Patent drawing
Patent drawing from the official filing.

Samsung has filed a patent for a storage device that improves how nonvolatile memory handles data requests. The system uses a controller to activate only the specific memory strings needed for a read command while electrically disconnecting the others from the shared power lines.

Why it mattersThis technical refinement helps manage power and signal interference in high-density memory chips, which is a standard part of improving storage efficiency.

In the filing’s own words

A storage device includes a storage controller configured to output a command instructing reading of data, and a nonvolatile memory device including a plurality of NAND strings corresponding to a plurality of bit lines and a plurality of string selection lines, and configured to select a plurality of first bit lines among the plurality of bit lines based on the command, electrically connect a plurality of first NAND strings corresponding to the plurality of first bit lines among the plurality of NAND strings to the plurality of first bit lines and a common source line, and electrically disconnect a plurality of second NAND strings corresponding to a plurality of second bit lines among the plurality of NAND strings from the plurality of second bit lines and the common source line.

What exactly they claim (claim 1)

1. A storage device, comprising: a storage controller configured to output a command instructing reading of data, and a nonvolatile memory device including a plurality of NAND strings corresponding to a plurality of bit lines and a plurality of string selection lines, and configured to: select a plurality of first bit lines among the plurality of bit lines based on the command, electrically connect a plurality of first NAND strings corresponding to the plurality of first bit lines among the plurality of NAND strings to the plurality of first bit lines and a common source line, and electrically disconnect a plurality of second NAND strings corresponding to a plurality of second bit lines among the plurality of NAND strings from the plurality of second bit lines and the common source line.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
STORAGE DEVICE AND NONVOLATILE MEMORY DEVICE INCLUDING PLURALITY OF NAND STRINGS
Publication number
US20260331176A1
Application number
19641818
Filed
Apr 8, 2026
Published
Oct 22, 2026
Inventors
5
Claims
20

Classified under

G11C 16/0483 Physics & computingG11C 16/08 Physics & computingG11C 16/10 Physics & computingG11C 16/24 Physics & computingG11C 16/26 Physics & computing

More from Samsung in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.