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Samsung patents 3D memory design with overlapping contacts

Patent drawing
Patent drawing from the official filing.

Samsung describes a method for building 3D semiconductor memory by stacking two separate circuit structures on a single base. The design uses a second substrate with transistors on one side and a conductive line in an insulating layer on the other, connected by a specific contact point.

Why it mattersThis filing focuses on the internal physical layout of memory chips, which could help manufacturers pack more data into smaller spaces.

In the filing’s own words

A three-dimensional semiconductor memory device includes a first peripheral circuit structure and a second peripheral circuit structure sequentially provided on a first substrate. The second peripheral circuit structure includes a second substrate having a first surface and a second surface facing the first surface, a transistor array including transistors on the first surface of the second substrate, an insulating layer on the second surface of the second substrate, a conductive line extending in the insulating layer in a first direction parallel to the first surface of the second substrate, and a conductive contact between the conductive line and the second surface of the second substrate.

What exactly they claim (claim 1)

1. A three-dimensional semiconductor memory device comprising a first peripheral circuit structure and a second peripheral circuit structure sequentially stacked on a first substrate, wherein the second peripheral circuit structure includes: a second substrate having a first surface and a second surface opposite the first surface; a transistor array including a plurality of transistors on the first surface of the second substrate; an insulating layer on the second surface of the second substrate; a conductive line extending in the insulating layer in a direction parallel to the first surface of the second substrate; and a conductive contact between the conductive line and the second surface of the second substrate.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH OVERLAPPING CONTACTS, AND ELECTRONIC SYSTEM INCLUDING THE SAME
Publication number
US20260324515A1
Application number
19546561
Filed
Feb 23, 2026
Published
Oct 15, 2026
Inventors
4
Claims
20

Classified under

H10W 90/24 Electricity & electronicsH10W 20/2134 Electricity & electronicsH10W 20/43 Electricity & electronicsH10W 20/435 Electricity & electronicsH10W 80/327 Electricity & electronicsH10W 90/26 Electricity & electronics

More from Samsung in Chips & hardware

Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.