Samsung patents chip method using EUV light to link gate structures
Samsung describes a method for making semiconductor chips that uses Extreme Ultraviolet (EUV) lithography to create precise patterns. The process involves forming temporary structures that are later replaced with metal to create connected gate electrodes on the chip.
In the filing’s own words
Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate including a cell disposing region and a first block border region, a plurality of gate electrodes on the cell disposing region and extending to the first block border region in a first direction to be parallel to each other, the gate electrodes including a first and second gate electrode, which are adjacent to each other, and a first connection structure on the first block border region, wherein the first connection structure is configured to physically connect the first and second gate electrodes to each other.
What exactly they claim (claim 1)
1. A method of fabricating a semiconductor device, comprising: forming an active pattern on a substrate; forming a sacrificial pattern on the active pattern, the sacrificial pattern comprising a first sacrificial pattern, a second sacrificial pattern, and a preliminary connection structure connecting the first sacrificial pattern and the second sacrificial pattern to each other; and replacing the first sacrificial pattern, the second sacrificial pattern, and the preliminary connection structure with a metal pattern to form a first gate electrode, a second gate electrode, and a connection structure, respectively, wherein the first sacrificial pattern and the second sacrificial pattern are line-shaped patterns extending to be parallel to each other, the preliminary connection structure is provided to physically connect end portions of the first sacrificial pattern and the second sacrificial pattern to each other, and the forming the sacrificial pattern comprises, forming a sacrificial layer on the substrate, forming a hard mask layer on the sacrificial layer, forming a hard mask pattern by patterning the hard mask layer using an Extreme Ultraviolet (EUV) lithography process, and patterning the sacrificial layer using the hard mask pattern as an etch mask.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number
- US20260324068A1
- Application number
- 19718299
- Filed
- Jun 24, 2026
- Published
- Oct 15, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10D 84/907 Electricity & electronicsH10D 84/953 Electricity & electronicsH10D 84/975 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.