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Samsung patents uneven chip structure to improve transistor design

Samsung has filed a patent for a specific layout of a semiconductor transistor. The design features a source and drain section with two sides of different sizes and heights, where one side is larger and positioned lower than the other. This asymmetrical shape is intended to optimize how the electrical current flows through the chip's channel.

Why it mattersThis is a routine improvement in chip manufacturing that could help engineers create more efficient transistors for future processors.

In the filing’s own words

A semiconductor device comprises a fin pattern, a source/drain pattern disposed on the fin pattern, a channel structure connected to the source/drain pattern, and a gate electrode overlapping the channel structure. The source/drain pattern comprises an overlap portion overlapping with the fin pattern, and a first side portion and a second side portion spaced apart from each other with the overlap portion interposed therebetween. The first side portion comprises a first lower sidewall. The second side portion comprises a second lower sidewall opposite to the first lower sidewall. A level of an uppermost portion of the first lower sidewall is lower than that of a lowermost portion of the second lower sidewall. A volume of the first side portion is larger than that of the second side portion.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a fin pattern; a source/drain pattern disposed on the fin pattern; a channel structure connected to the source/drain pattern; and a gate electrode overlapping the channel structure, wherein the source/drain pattern comprises: an overlap portion overlapping with the fin pattern; and a first side portion and a second side portion spaced apart from each other with the overlap portion interposed therebetween, wherein the first side portion comprises a first lower sidewall, wherein the second side portion comprises a second lower sidewall opposite to the first lower sidewall, wherein a level of an uppermost portion of the first lower sidewall is lower than that of a lowermost portion of the second lower sidewall, and wherein a volume of the first side portion is larger than that of the second side portion.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
SEMICONDUCTOR DEVICE
Publication number
US20260324061A1
Application number
19363770
Filed
Oct 21, 2025
Published
Oct 15, 2026
Inventors
3
Claims
20

Classified under

H10D 84/832 Electricity & electronicsH10D 30/503 Electricity & electronicsH10D 30/506 Electricity & electronicsH10D 62/151 Electricity & electronicsH10D 62/405 Electricity & electronicsH10D 64/256 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.