Samsung patents chip design with gate protrusions to improve data storage
Samsung describes a semiconductor device where the gate structures include small protrusions that extend toward the shared source/drain region between them. This specific shape is designed to optimize the electrical connection between the gate and the channel area in the chip.
In the filing’s own words
A semiconductor device includes a substrate, a first gate structure and a second gate structure on the substrate and spaced apart from each other in a first direction, a first source/drain region on one side of the first gate structure, a second source/drain region on one side of the second gate structure, and a common source/drain region between the first gate structure and the second gate structure, where the common source/drain region includes a body portion having a first length in the first direction between the first gate structure and the second gate structure and a first width in a second direction intersecting the first direction and a protrusion protruding from one side of the body portion and having a second length in the first direction that is less than the first length.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a substrate; a first gate structure and a second gate structure on the substrate and spaced apart from each other in a first direction; a first source/drain region on one side of the first gate structure; a second source/drain region on one side of the second gate structure; and a common source/drain region between the first gate structure and the second gate structure, wherein the common source/drain region comprises: a body portion having a first length in the first direction between the first gate structure and the second gate structure and a first width in a second direction intersecting the first direction, and a protrusion protruding from one side of the body portion and having a second length in the first direction that is less than the first length, and wherein at least one of the first gate structure and the second gate structure comprises: a base region between the body portion and at least one of the first source/drain region and the second source/drain region; and a gate protrusion protruding from the base region toward the protrusion.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICES WITH GATE STRUCTURES HAVING GATE PROTRUSIONS AND DATA STORAGE SYSTEMS INCLUDING THE SAME
- Publication number
- US20260324059A1
- Application number
- 19629602
- Filed
- Mar 26, 2026
- Published
- Oct 15, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10D 84/83125 Electricity & electronicsH10B 41/40 Electricity & electronicsH10B 43/40 Electricity & electronicsH10D 62/151 Electricity & electronicsH10D 64/519 Electricity & electronicsH10W 10/17 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.