Samsung patents chip design with crystal extensions for better memory
Samsung describes a semiconductor layout where a main active area has single-crystal extensions on its ends. These extensions sit at the same level as the base and connect to contact plugs that support a capacitor.
In the filing’s own words
A semiconductor device includes an active structure, a gate structure, a bit line structure, a contact plug structure, and a capacitor. The active structure includes an active pattern on a substrate and extending in a first direction, and an epitaxial pattern on a sidewall of each of opposite end portions in the first direction of the active pattern. A lowermost surface of the epitaxial pattern is substantially coplanar with a lower surface of the active pattern, and the epitaxial pattern includes a single crystalline semiconductor material. The gate structure is disposed in a recess extending through a portion of an upper portion of the active structure. The bit line structure is disposed on a central portion of the active structure in the first direction. The contact plug structure is disposed on each of opposite end portions of the active structure. The capacitor is disposed on the contact plug structure.
What exactly they claim (claim 1)
1. A semiconductor device comprising: at least one active structure including: an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate; and an epitaxial pattern on a sidewall of each of opposite end portions in the first direction of the active pattern, a lowermost surface of the epitaxial pattern being substantially coplanar with a lower surface of the active pattern, and the epitaxial pattern including a single crystalline semiconductor material; a gate structure in a recess extending through a portion of an upper portion of the at least one active structure; a bit line structure on a central portion of the at least one active structure in the first direction; a contact plug structure on each of the opposite end portions of the at least one active structure; and a capacitor on the contact plug structure.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE INCLUDING ACTIVE STRUCTURE
- Publication number
- US20260323923A1
- Application number
- 19646074
- Filed
- Apr 13, 2026
- Published
- Oct 15, 2026
- Inventors
- 2
- Claims
- 20
Classified under
H10B 12/482 Electricity & electronicsH10B 12/0335 Electricity & electronicsH10B 12/315 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.