Samsung patents method for mixing chip polishing slurry on demand
Samsung describes a method for making the liquid slurry used to smooth computer chips by mixing a concentrated base with water, hydrogen peroxide, and additives. The system calculates the exact amounts needed and controls valves to mix these ingredients in real time before applying them to the chip surface.
In the filing’s own words
A method of chemical mechanical polishing a substrate using a chemical mechanical polishing apparatus comprises determining a flow rate of a slurry to be prepared using mixing ratio data of slurry, supplying the slurry stock solution to a mixer of the chemical mechanical polishing apparatus from a slurry stock solution supply device, supplying the hydrogen peroxide, the deionized water, and the additive to the mixer from tanks, mixing, by the mixer, the slurry stock solution, and the hydrogen peroxide, the deionized water, and the additive with each other to prepare the slurry, and supplying the slurry to a polishing pad to chemically and mechanically polish the substrate.
What exactly they claim (claim 1)
1. A method of chemical mechanical polishing a substrate using a chemical mechanical polishing apparatus, comprising: determining a flow rate of a slurry to be prepared using mixing ratio data of slurry; calculating a flow rate of a slurry stock solution, a flow rate of a hydrogen peroxide, a flow rate of a deionized (DI) water, and a flow rate of an additive for preparing the slurry using the flow rate of the slurry; supplying the slurry stock solution to a mixer of the chemical mechanical polishing apparatus from a slurry stock solution supply device disposed outside the chemical mechanical polishing apparatus through a supply line connecting the chemical mechanical polishing apparatus to the slurry stock solution supply device; supplying the hydrogen peroxide, the deionized (DI) water, and the additive to the mixer from tanks disposed inside the chemical mechanical polishing apparatus through a plurality of supply pipes connecting the mixer to the tanks configured to store at least one of the hydrogen peroxide, the deionized (DI) water, and the additive; mixing, by the mixer, the slurry stock solution, and the hydrogen peroxide, the deionized (DI) water, and the additive with each other to prepare the slurry; and supplying the slurry to a polishing pad to chemically and mechanically polish the substrate, wherein the supplying of the slurry stock solution to the mixer includes controlling a first valve disposed on the supply line and a first flow rate controller disposed on a first supply pipe connecting the supply line to the mixer, and the supplying of the hydrogen peroxide, the deionized (DI) water, and the additive to the mixer includes controlling a second flow rate controller disposed on a second supply pipe connecting a hydrogen peroxide storage tank to the mixer, a third flow rate controller disposed on a third supply pipe connecting a deionized (DI) water storage tank to the mixer, and a fourth flow rate controller disposed on a fourth supply pipe connecting an additive storage tank to the mixer.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE USING A CHEMICAL MECHANICAL POLISHING APPARATUS
- Publication number
- US20260316215A1
- Application number
- 19636615
- Filed
- Apr 1, 2026
- Published
- Oct 15, 2026
- Inventors
- 5
- Claims
- 20
Classified under
B24B 37/0056 Operations & transportB24B 57/02 Operations & transportG05D 11/138 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.
