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Samsung patents chip design using thin 2D material to cool wiring

Patent drawing
Patent drawing from the official filing.

Samsung describes a semiconductor chip design where a thin, two-dimensional material is placed around the vertical connections (vias) inside the chip. This material acts as a heat-dissipation structure, touching the metal wiring above to help move heat away from the device layer.

Why it mattersThis filing suggests a specific method for improving heat management in stacked chip structures, which is a key challenge in making processors faster and more efficient.

In the filing’s own words

According to some embodiments of the present disclosure, a semiconductor chip includes a device layer having a first surface and a second surface opposite to the first surface and a first wiring structure on the first surface of the device layer. The first wiring structure includes a first via layer having a first via, a first metal layer having a first wiring, the first metal layer being stacked on the first via layer in a first direction perpendicular to the first surface of the device layer, and a first heat-dissipation structure including a first heat-dissipation film having a first portion surrounding a bottom surface and a side surface of the first via. The first heat-dissipation structure includes a 2D material, and an upper surface of the first portion of the first heat-dissipation film contacts a lower surface of the first wiring.

What exactly they claim (claim 1)

1. A semiconductor chip, comprising: a device layer having a first surface and a second surface opposite to the first surface; and a first wiring structure on the first surface of the device layer, wherein the first wiring structure comprises: a first via layer comprising a first via; a first metal layer comprising a first wiring, the first metal layer being stacked on the first via layer in a first direction perpendicular to the first surface of the device layer; and a first heat-dissipation structure comprising a first heat-dissipation film including a first portion surrounding a bottom surface and a side surface of the first via, the first heat-dissipation structure comprising a 2D material, and wherein an upper surface of the first portion of the first heat-dissipation film contacts a lower surface of the first wiring.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR CHIP, CHIP STACKED STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
Publication number
US20260314405A1
Application number
19329850
Filed
Sep 16, 2025
Published
Oct 8, 2026
Inventors
6
Claims
20

Classified under

H10W 40/25 Electricity & electronicsH10W 20/20 Electricity & electronicsH10W 20/42 Electricity & electronicsH10W 90/00 Electricity & electronicsH10W 72/07251 Electricity & electronicsH10W 72/20 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.