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Samsung patents light-based method to flatten warped semiconductor wafers

Samsung has filed a patent for a method to fix warping in silicon wafers during chip manufacturing. The process uses a shutter to direct light onto a specific layer on the wafer's underside, heating it slightly to adjust its shape based on initial measurements.

Why it mattersThis technique aims to improve the precision of chip fabrication by correcting physical distortions in the silicon base, which is critical for producing high-quality microchips.

In the filing’s own words

A method for fabricating a semiconductor device includes obtaining measurement information by measuring a warpage of a wafer, forming a warpage control layer entirely on a lower surface of the wafer, adjusting either a type of a shutter or a size of an open region of the shutter using the measurement information, the shutter positioned below the wafer inside a chamber, providing to the warpage control layer a light emitted from a light source and passing through the shutter, and adjusting the warpage by partially changing a temperature of the warpage control layer using the light provided to the warpage control layer, wherein the shutter is positioned between the light source and the lower surface of the wafer, and wherein the lower surface of the wafer and a lower surface of the warpage control layer are spaced apart from an upper surface of the shutter in a vertical direction.

What exactly they claim (claim 1)

1. A method for fabricating a semiconductor device, the method comprising: obtaining a warpage measurement information by measuring a warpage of a wafer; forming a warpage control layer entirely on a lower surface of the wafer; adjusting either a type of a shutter or a size of an open region of the shutter using the warpage measurement information, the shutter positioned below the wafer inside a chamber; providing to the warpage control layer a light that is emitted from a light source and passes through the shutter; and adjusting the warpage of the wafer by partially changing a temperature of the warpage control layer using the light provided to the warpage control layer, wherein the shutter is positioned between the light source and the lower surface of the wafer, and wherein each of the lower surface of the wafer and a lower surface of the warpage control layer is spaced apart from an upper surface of the shutter in a vertical direction.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING HEAT TREATMENT APPARATUS
Publication number
US20260314299A1
Application number
19393059
Filed
Nov 18, 2025
Published
Oct 8, 2026
Inventors
2
Claims
20

Classified under

H10P 72/0436 Electricity & electronicsH10P 72/0616 Electricity & electronicsH10P 74/238 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.