Samsung patents memory chip using manganese and oxide base
Samsung has filed a patent for a type of computer memory called magnetic random access memory (MRAM). The design uses a base layer made of alkaline earth oxide and a top layer, known as a free layer, made from a manganese-based compound or alloy.
In the filing’s own words
A magnetic random access memory (MRAM) is provided. The MRAM includes: a substrate, wherein the substrate includes an alkaline earth oxide; and a free layer disposed on the substrate, wherein the free layer includes an Mn-based compound or alloy.
What exactly they claim (claim 1)
1. A magnetic random access memory (MRAM) comprising: a substrate, wherein the substrate includes an alkaline earth oxide; and a free layer disposed on the substrate, wherein the free layer includes an Mn-based compound or alloy.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- MAGNETIC RANDOM ACCESS MEMORY WITH FREE LAYER
- Publication number
- US20260314267A1
- Application number
- 19350391
- Filed
- Oct 6, 2025
- Published
- Oct 8, 2026
- Inventors
- 4
- Claims
- 19
Classified under
H10N 50/85 Electricity & electronicsH01F 10/329 Electricity & electronicsH10B 61/10 Electricity & electronicsH10B 61/20 Electricity & electronicsH10N 50/01 Electricity & electronicsH10N 50/10 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.