Samsung patents chip method using backside contacts for tighter circuits

1. A method of manufacturing an integrated circuit device, the method comprising: forming an etch stop layer on a front-side surface of a substrate; forming a plurality of fin regions by etching each of the etch stop layer and the substrate, wherein the plurality of fin regions define a plurality of first trench regions and a plurality of second trench regions, a vertical level of a bottom surface of each of the plurality of second trench regions is closer to a backside surface of the substrate than a vertical level of a bottom surface of each of the plurality of first trench regions, and a portion of the etch stop layer remains on a top surface of each of the plurality of fin regions; forming a first isolation insulating film covering sidewalls of each of the plurality of fin regions, wherein the first isolation insulating film comprises a plurality of first portions filling the plurality of first trench regions and a plurality of second portions filling the plurality of second trench regions; forming a plurality of source/drain regions each disposed on the portion of the etch stop layer remaining on the top surface of each of the plurality of fin regions; removing a portion of the substrate from the backside surface of the substrate to expose a plurality of protruding portions of the plurality of second portions of the first isolation insulating film beyond the substrate, and to form a narrow space between two adjacent protruding portions among the plurality of protruding portions, the narrow space exposing a first fin region selected from the plurality of fin regions; forming a blocking mask pattern in the narrow space, the blocking mask pattern covering the first fin region; etching the plurality of fin regions around the blocking mask pattern by using the etch stop layer as an etch stop point to remain a partial portion of the first fin region covered by the blocking mask pattern between the etch stop layer and the blocking mask pattern; removing exposed portions of the etch stop layer to form an etch stop pattern and to expose a plurality of first source/drain regions among the plurality of source/drain regions while covering a second source/drain region among the plurality of source/drain regions with the etch stop pattern; forming a plurality of second isolation insulating films filling spaces defined by each of the first isolation insulating film, the etch stop pattern, the partial portion of the first fin region, and the blocking mask pattern; forming a contact space by removing the blocking mask pattern, the partial portion of the first fin region, and the etch stop pattern, the contact space exposing the second source/drain region; and forming a backside contact structure in the contact space.