Samsung patents chip design using silicon film to improve contact layers
Samsung describes a semiconductor structure where a vertical channel layer connects two metal parts. A thin film made of silicon and metal nitride is placed between the channel and one metal part to manage the connection.
In the filing’s own words
A semiconductor device includes a metal-containing conductive line, a metal-containing contact pattern apart from the metal-containing conductive line in a vertical direction and having a smaller length than the metal-containing conductive line, a channel layer extending in the vertical direction between the metal-containing conductive line and the metal-containing contact pattern and having an upper end contacting a first conductive member and a lower end spaced apart from a second conductive member, the first conductive member being one of the metal-containing conductive line and the metal-containing contact pattern, and the second conductive member being the other one thereof, and a silicon-containing metal nitride film between the second conductive member and the lower end of the channel layer and having a first surface contacting the second conductive member and a second surface contacting the channel layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a metal-containing conductive line having a width in a first lateral direction and a length in a second lateral direction, wherein the second lateral direction is substantially perpendicular to the first lateral direction; a metal-containing contact pattern spaced apart from the metal-containing conductive line in a vertical direction, the metal-containing contact pattern having a smaller length than the metal-containing conductive line in the second lateral direction; a channel layer extending in the vertical direction between the metal-containing conductive line and the metal-containing contact pattern, the channel layer having an upper end in contact with a first conductive member and a lower end spaced apart from a second conductive member to face the second conductive member in the vertical direction, wherein the first conductive member is one of the metal-containing conductive line and the metal-containing contact pattern, and the second conductive member is the other one of the metal-containing conductive line and the metal-containing contact pattern; and a silicon-containing metal nitride film between the second conductive member and the lower end of the channel layer, the silicon-containing metal nitride film having a first surface in contact with a contact surface of the second conductive member and a second surface in contact with the lower end of the channel layer.
Facts
- Company
- Samsung (Samsung Electronics Co, Ltd.)
- Official title
- SEMICONDUCTOR DEVICE INCLUDING CHANNEL LAYER
- Publication number
- US20260313960A1
- Application number
- 19638027
- Filed
- Apr 2, 2026
- Published
- Oct 8, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10D 30/6728 Electricity & electronicsH10B 12/315 Electricity & electronicsH10B 12/482 Electricity & electronicsH10B 12/485 Electricity & electronicsH10B 12/488 Electricity & electronicsH10B 12/50 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.