Samsung patents chip design with vertical wires through mold layers
Samsung has filed a patent for a semiconductor structure that uses vertical wires, called through electrodes, to connect components within a chip. These wires pass through specific insulating layers and dummy blocks to link different parts of the memory cell structure.
In the filing’s own words
A semiconductor device including: a cell structure including: a first surface; a second surface opposite to the first surface; and a main block and a dummy block each comprising a cell region and a connection region, in which the dummy block includes: a mold structure comprising at least one gate electrode and at least one mold insulating layer in a first direction in the cell region and the connection region; a common source layer on the mold structure; a first insulating layer on the mold structure and the common source layer; a channel structure connected to the common source layer; a cell plug in contact with the at least one gate electrode; a contact structure passing through the first insulating layer; and a through electrode connected to the contact structure by passing through the mold structure in the first direction in the cell region.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a cell structure comprising: a first surface; a second surface opposite to the first surface; and a main block and a dummy block each comprising a cell region and a connection region, wherein the dummy block comprises: a mold structure comprising at least one gate electrode and at least one mold insulating layer in a first direction in the cell region and the connection region; a common source layer on the mold structure; a first insulating layer on the mold structure and the common source layer; a channel structure connected to the common source layer by passing through the mold structure in the first direction in the cell region; a cell plug in contact with the at least one gate electrode by passing through the mold structure in the first direction in the connection region; a contact structure passing through the first insulating layer; and a through electrode connected to the contact structure by passing through the mold structure in the first direction in the cell region.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE WITH THROUGH ELECTRODE THROUGH MOLD STRUCTURE
- Publication number
- US20260313894A1
- Application number
- 19456629
- Filed
- Jan 22, 2026
- Published
- Oct 8, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10B 43/27 Electricity & electronicsH10B 41/10 Electricity & electronicsH10B 41/27 Electricity & electronicsH10B 41/41 Electricity & electronicsH10B 43/10 Electricity & electronicsH10B 43/40 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.