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Samsung patents memory layout with vertical contacts between word lines

Patent drawing
Patent drawing from the official filing.

Samsung describes a semiconductor memory design where word lines run horizontally across a stack and pad region. The invention places a specific pad and vertical contact structure between two adjacent word lines at the same level to connect them.

Why it mattersThis is a structural improvement to how memory chips are built, potentially affecting the density or reliability of future storage components.

In the filing’s own words

A semiconductor memory device includes a substrate including a stack region and a pad region arranged in a first horizontal direction, a first word line and a second word line arranged at a same vertical level, extending in the first horizontal direction in the stack region and the pad region, and spaced apart in a second horizontal direction intersecting the first horizontal direction, a plurality of bit lines extending in a vertical direction in the stack region and spaced apart in the first horizontal direction, a plurality of memory cells in the stack region, a word line pad between the first word line and the second word line in the pad region, and a word line contact extending in the vertical direction on the word line pad.

What exactly they claim (claim 1)

1. A semiconductor memory device comprising: a substrate comprising a stack region and a pad region arranged in a first horizontal direction; a first word line and a second word line at a same vertical level and extending in the first horizontal direction in the stack region and the pad region, the first word line and the second word line spaced apart in a second horizontal direction intersecting the first horizontal direction; a plurality of bit lines extending in a vertical direction in the stack region and spaced apart in the first horizontal direction; a plurality of memory cells in the stack region; a word line pad between the first word line and the second word line in the pad region; and a word line contact extending in the vertical direction on the word line pad.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
SEMICONDUCTOR MEMORY DEVICE
Publication number
US20260313883A1
Application number
19629227
Filed
Mar 26, 2026
Published
Oct 8, 2026
Inventors
4
Claims
20

Classified under

H10B 12/488 Electricity & electronicsH10B 12/02 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.