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Samsung patents capacitor design with layered insulating films

Samsung has filed a patent for a specific structure used in capacitors, which are components that store electrical charge. The design uses a main dielectric layer made of a rutile phase material, sandwiched between two electrodes. It adds two very thin insulating layers between the electrode and the main dielectric to improve the structure's performance.

Why it mattersThis is a detailed improvement to semiconductor manufacturing that could help make electronic components more reliable or efficient, though it is unlikely to be visible to consumers directly.

In the filing’s own words

A capacitor structure according to some embodiments of the present disclosure includes an electrode structure including a first electrode and a second electrode on the first electrode, a dielectric film disposed between the first electrode and the second electrode. The dielectric film includes a rutile phase material and has a first thickness, a first interfacial insulating film disposed between the first electrode and the dielectric film and having a second thickness smaller than the first thickness, and a first inserted insulating film disposed between the first electrode and the first interfacial insulating film and having a third thickness smaller than the second thickness.

What exactly they claim (claim 1)

1. A capacitor structure comprising: an electrode structure including a first electrode and a second electrode on the first electrode; a dielectric film disposed between the first electrode and the second electrode, wherein the dielectric film includes a rutile phase material and has a first thickness; a first interfacial insulating film disposed between the first electrode and the dielectric film and having a second thickness smaller than the first thickness; and a first inserted insulating film disposed between the first electrode and the first interfacial insulating film and having a third thickness smaller than the second thickness.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Publication number
US20260313876A1
Application number
19461984
Filed
Jan 28, 2026
Published
Oct 8, 2026
Inventors
5
Claims
20

Classified under

H10B 12/315 Electricity & electronicsH10D 1/714 Electricity & electronicsH10D 1/694 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.