Samsung patents memory design that recharges lines to speed up data reads
Samsung describes a memory chip layout that uses a switch to disconnect and reconnect electrical lines during data retrieval. A pre-charge circuit resets the second set of lines to a specific voltage before the amplified data from the first set is transferred to them.
In the filing’s own words
Provided is a memory device including a first sense amplification circuit connected to a first input and output line pair, a pre-charge circuit connected to a second input and output line pair, and a first switch circuit, wherein the pre-charge circuit is configured to pre-charge the second input and output line pair at a pre-charge voltage after the first switch circuit disconnects the first input and output line pair from the second input and output line pair, and wherein the first switch circuit is configured to connect the first input and output line pair and the second input and output line pair to deliver a voltage of the first input and output line pair, which is amplified by the first sense amplification circuit, to the pre-charged second input and output line pair in a read operation.
What exactly they claim (claim 1)
1. A memory device comprising: a first sense amplification circuit configured to amplify a voltage of a first input and output line pair; a pre-charge circuit connected to a second input and output line pair; and a first switch circuit between the first input and output line pair and the second input and output line pair, wherein the pre-charge circuit is configured to pre-charge the second input and output line pair at a pre-charge voltage after the first switch circuit disconnects the first input and output line pair from the second input and output line pair, and wherein the first switch circuit is configured to connect the first input and output line pair to the second input and output line pair to deliver a voltage of the first input and output line pair, which is amplified by the first sense amplification circuit, to the pre-charged second input and output line pair in a read operation.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- MEMORY DEVICE AND METHOD OF OPERATION THEREOF
- Publication number
- US20260311746A1
- Application number
- 19569641
- Filed
- Mar 17, 2026
- Published
- Oct 8, 2026
- Inventors
- 5
- Claims
- 20
Classified under
G11C 11/4091 Physics & computingG11C 11/4074 Physics & computingG11C 11/4096 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.