Samsung patents memory chip that switches between two data speeds
Samsung describes a nonvolatile memory device that uses different pins and signal frequencies for reading and writing data. In one mode, it handles commands and data on the same lines, while in another, it separates these tasks to optimize performance.
In the filing’s own words
A nonvolatile memory device includes a first pin that receives a first signal, a second pin that receives a second signal, third pins that receive third signals, a fourth pin that receives a write enable signal, a memory cell array, and a memory interface circuit that obtains a command, an address, and data from the third signals in a first mode and obtains the command and the address from the first signal and the second signal and the data from the third signals in a second mode. In the first mode, the memory interface circuit obtains the command from the third signals and obtains the address from the third signals. In the second mode, the memory interface circuit obtains the command from the first signal and the second signal and obtains the address from the first signal and the second signal.
What exactly they claim (claim 1)
1. A storage device comprising: a nonvolatile memory; a volatile memory; a controller coupled to the nonvolatile memory and the volatile memory; and a plurality of pins through which the controller communicates with the nonvolatile memory, the plurality of pins including a first pin and a second pin, wherein: in a write operation, the controller is configured to transmit to the nonvolatile memory via the first pin a command/address signal synchronized with a first signal and to transmit to the nonvolatile memory first data based on the command/address signal, in a read operation, the controller is configured to transmit via the second pin to the nonvolatile memory a second signal synchronized with a third signal, and to receive from the nonvolatile memory second data based on the second signal, and a frequency of the second signal is different from a frequency of the first signal.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- NONVOLATILE MEMORY DEVICE SUPPORTING HIGH-EFFICIENCY I/O INTERFACE
- Publication number
- US20260310383A1
- Application number
- 19712180
- Filed
- Jun 18, 2026
- Published
- Oct 8, 2026
- Inventors
- 4
- Claims
- 20
Classified under
G06F 3/0659 Physics & computingG06F 1/06 Physics & computingG06F 3/0613 Physics & computingG06F 3/0679 Physics & computingG06F 13/1668 Physics & computingG11C 16/0483 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.