Samsung patents stacked metal layers for semiconductor chips
Samsung has filed a patent for a specific design of stacked metal connections inside a chip. The design uses a protective liner around the bottom metal layer and a separate stop layer around the top layer to control how the materials interact during manufacturing.
In the filing’s own words
A semiconductor device includes a first conductive structure, a liner in contact with a sidewall of the first conductive structure, a second conductive structure on the first conductive structure, and an etch stop layer in contact with a sidewall of the second conductive structure. A lower surface of the etch stop layer is in contact with an upper surface of the liner.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a first conductive structure; a liner in contact with a sidewall of the first conductive structure; a second conductive structure on the first conductive structure; and an etch stop layer in contact with a sidewall of the second conductive structure, wherein a lower surface of the etch stop layer is in contact with an upper surface of the liner.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE
- Publication number
- US20260305310A1
- Application number
- 19350736
- Filed
- Oct 6, 2025
- Published
- Oct 1, 2026
- Inventors
- 6
- Claims
- 20
Classified under
H10W 20/435 Electricity & electronicsH10W 20/43 Electricity & electronicsH10D 30/019 Electricity & electronicsH10D 30/503 Electricity & electronicsH10D 62/151 Electricity & electronicsH10D 64/256 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.