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Samsung patents new way to build tiny metal patterns for chips

Patent drawing
Patent drawing from the official filing.

Samsung describes a method for creating precise metal oxide structures on semiconductor wafers. The process involves coating a liquid precursor onto existing patterns, hardening it into a solid layer, and then etching it back to leave metal oxide only in the gaps between the original patterns.

Why it mattersThis technique could help manufacturers create finer and more reliable connections inside computer chips, which is a standard part of the ongoing effort to make processors smaller and faster.

In the filing’s own words

A method of manufacturing a semiconductor device may include forming resist patterns on a substrate, coating a precursor on the resist patterns to form a preliminary metal oxide layer, the precursor being in a state of one of a solution, a sol, or a gel, solidifying the preliminary metal oxide layer to form a metal oxide layer, and recessing the metal oxide layer to form a metal oxide pattern exposing top surfaces of the resist patterns, wherein the resist patterns include a metal oxide, an oxygen content in the metal oxide pattern is greater than an oxygen content in the resist patterns, and the metal oxide pattern is arranged between the resist patterns.

What exactly they claim (claim 1)

1. A method of manufacturing a semiconductor device, the method comprising: forming resist patterns on a substrate; coating a precursor on the resist patterns to form a preliminary metal oxide layer, the precursor being in a state of one of a solution, a sol, or a gel; solidifying the preliminary metal oxide layer to form a metal oxide layer; and recessing the metal oxide layer to form a metal oxide pattern exposing top surfaces of the resist patterns, wherein the resist patterns comprise a metal oxide, an oxygen content in the metal oxide pattern is greater than an oxygen content in the resist patterns, and the metal oxide pattern is arranged between the resist patterns.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Publication number
US20260305268A1
Application number
19364682
Filed
Oct 21, 2025
Published
Oct 1, 2026
Inventors
4
Claims
20

Classified under

H10P 76/4083 Electricity & electronicsH10P 50/71 Electricity & electronicsH10P 76/405 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.