Samsung patents memory chip using mixed crystal structure
Samsung has filed a patent for a type of memory called magnetic random access memory (MRAM). The design uses a specific layer made of an alloy containing manganese that has two different crystal structures in different parts of the same layer.
In the filing’s own words
A magnetic random access memory (MRAM) is provided. The MRAM includes: a first layer; a second layer; and a first free layer (FL) disposed between the first layer and the second layer, wherein the first FL includes an Mn-based alloy, and wherein a first portion of the first FL adjacent to the first layer or adjacent to the second layer has an fcc-crystal phase, and a second portion of the first FL adjacent to the first layer or adjacent to the second layer has a bcc-crystal phase.
What exactly they claim (claim 1)
1. A magnetic random access memory (MRAM) comprising: a first layer; a second layer; and a first free layer (FL) disposed between the first layer and the second layer, wherein the first FL includes an Mn-based alloy, and wherein a first portion of the first FL adjacent to the first layer or adjacent to the second layer has an fcc-crystal phase, and a second portion of the first FL adjacent to the first layer or adjacent to the second layer has a bcc-crystal phase.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- MAGNETIC RANDOM ACCESS MEMORY WITH HYBRID FREE LAYER
- Publication number
- US20260305182A1
- Application number
- 19350400
- Filed
- Oct 6, 2025
- Published
- Oct 1, 2026
- Inventors
- 4
- Claims
- 18
Classified under
H10N 50/85 Electricity & electronicsG11C 11/161 Physics & computingH10N 50/01 Electricity & electronicsH10N 50/10 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.
