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Samsung patents 2D semiconductor layers with metal contacts

Patent drawing from the official filing.

Samsung describes a semiconductor device that uses a channel made of two-dimensional semiconductor material arranged in a specific stacked shape. The design includes source and drain contact structures that wrap around the vertical extensions of the channel to improve electrical connections.

Why it mattersThis filing focuses on the physical structure of transistors, which could lead to more efficient chips, though it is a detailed technical improvement rather than a new consumer feature.

In the filing’s own words

A semiconductor device includes a channel structure, and source and drain contact structures. The channel structure includes a two-dimensional semiconductor material. The channel structure includes a central portion extending in a first direction, and first and second extension portions. The first extension portions are disposed in a vertical direction, and each of the first extension portions extends in the first direction from a first end of the central portion. The second extension portions are disposed in the vertical direction, and each of the second extension portions extends in the first direction from a second end of the central portion. The source contact structure covers lower and upper surfaces and a sidewall of each of the first extension portions of the channel structure. The drain contact structure covers lower and upper surfaces and a sidewall of each of the second extension portions of the channel structure.

What exactly they claim (claim 1)

1. A semiconductor device, comprising: a channel structure on a substrate, the channel structure including a two-dimensional semiconductor material, and the channel structure including: a central portion extending in a first direction parallel to an upper surface of the substrate; first extension portions spaced apart from each other in a vertical direction perpendicular to the upper surface of the substrate, each of the first extension portions extending in the first direction from a first end in the first direction of the central portion; and second extension portions spaced apart from each other in the vertical direction, each of the second extension portions extending in the first direction from a second end in the first direction of the central portion; a source contact structure covering lower and upper surfaces and a sidewall of each of the first extension portions of the channel structure; and a drain contact structure covering lower and upper surfaces and a sidewall of each of the second extension portions of the channel structure.

Facts

Company: Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title: SEMICONDUCTOR DEVICES HAVING ALTERNATING LAYERS OF TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL AND METAL
Publication number: US20260304872A1
Application number: 19570877
Filed: Mar 18, 2026
Published: Oct 1, 2026
Inventors: 4
Claims: 20

Classified under

H10D 62/292 Electricity & electronicsH10D 30/481 Electricity & electronicsH10D 64/62 Electricity & electronics

Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.