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Samsung patents chip design with built-in electrical fuses

Patent drawing
Patent drawing from the official filing.

Samsung has filed a patent for a semiconductor device that includes specific wiring patterns and a small fuse component between them. This fuse is designed to break down electrically if a voltage higher than a set limit is applied, effectively acting as a safety switch within the chip's structure.

Why it mattersThis filing describes a method for protecting internal chip connections from voltage spikes, which is a standard technique for improving the reliability of electronic components.

In the filing’s own words

Embodiments of the present disclosure provide a semiconductor device comprising: a first intermetallic insulating layer comprising a first interconnection pattern extending in a first direction, a conductive via disposed adjacently to the first interconnection pattern, and a fuse portion disposed between the first interconnection pattern and the conductive via; and a second intermetallic insulating layer comprising a second interconnection pattern disposed on the first intermetallic insulating layer, contacting an upper surface of the conductive via, and extending in a second direction, intersecting the first direction, and the fuse portion is subject to an insulation breakdown when a voltage higher than a critical level is applied between the conductive via and the first interconnection pattern.

What exactly they claim (claim 1)

1. A semiconductor device, comprising: a first intermetallic insulating layer comprising a first interconnection pattern extending in a first direction, a conductive via disposed adjacently to the first interconnection pattern, and a fuse portion disposed between the first interconnection pattern and the conductive via; and a second intermetallic insulating layer disposed on the first intermetallic insulating layer and comprising a second interconnection pattern contacting an upper surface of the conductive via and extending in a second direction, intersecting the first direction, wherein the fuse portion is configured such that insulation breakdown occurs when a voltage higher than a critical level is applied between the conductive via and the first interconnection pattern.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR DEVICES INCLUDING INTERCONNECTION PATTERNS
Publication number
US20260304758A1
Application number
19548467
Filed
Feb 24, 2026
Published
Oct 1, 2026
Inventors
4
Claims
20

Classified under

H10B 20/25 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.