Samsung patents memory chip design with metal shield to block signal noise
Samsung has filed a patent for a semiconductor device that places a conductive shield between adjacent bit lines and active patterns in a memory chip. This metal barrier is positioned to separate the electrical pathways, helping to prevent unwanted interference between neighboring components.
In the filing’s own words
A semiconductor device includes first and second bit lines each extending in a first direction and adjacent to each other in a second direction perpendicular to the first direction; first and second active patterns each including a first region, a second region, and a channel region between the first and second regions, wherein the first region of the first active pattern is connected to the first bit line in a third direction perpendicular to the first and second directions, and the first region of the second active pattern is connected to the second bit line in the third direction; a word line facing the channel regions of the first and second active patterns; and a conductive shield structure disposed between the first bit line and the second bit line, and between the first region of the first active pattern and the first region of the second active pattern.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a first bit line and a second bit line each extending in a first direction and adjacent to each other in a second direction perpendicular to the first direction; a first active pattern and a second active pattern each including a first region, a second region, and a channel region between the first and second regions, wherein the first region of the first active pattern is connected to the first bit line in a third direction perpendicular to the first and second directions, and the first region of the second active pattern is connected to the second bit line in the third direction; a word line facing the channel regions of the first and second active patterns; and a conductive shield structure disposed between the first bit line and the second bit line, and between the first region of the first active pattern and the first region of the second active pattern.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN AND CONDUCTIVE SHIELD STRUCTURE
- Publication number
- US20260304748A1
- Application number
- 19563389
- Filed
- Mar 11, 2026
- Published
- Oct 1, 2026
- Inventors
- 2
- Claims
- 20
Classified under
H10B 12/315 Electricity & electronicsH10B 12/482 Electricity & electronicsH10B 12/488 Electricity & electronicsH10D 62/151 Electricity & electronicsH10D 62/83 Electricity & electronicsH10W 20/435 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.