Samsung patents memory chip design with alternating gate structures
Samsung describes a semiconductor memory device that uses back-gate lines running along a specific direction. It places two types of semiconductor patterns on opposite sides of these lines, arranging them in an alternating pattern.
In the filing’s own words
The present invention provides a semiconductor memory device. A semiconductor memory device includes a lower insulating layer, back-gate lines each extending in a first direction on the lower insulating layer, first semiconductor patterns on first side surfaces of the back-gate lines, and second semiconductor patterns on second side surfaces of the back gate lines. The first semiconductor patterns and the second semiconductor patterns are alternately disposed along the first direction.
What exactly they claim (claim 1)
1. A semiconductor memory device comprising: a lower insulating layer; back-gate lines each extending in a first direction on the lower insulating layer; first semiconductor patterns on first side surfaces of the back-gate lines; and second semiconductor patterns on second side surfaces of the back-gate lines, wherein the first semiconductor patterns and the second semiconductor patterns are alternately disposed along the first direction.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR MEMORY DEVICE
- Publication number
- US20260304744A1
- Application number
- 19374654
- Filed
- Oct 30, 2025
- Published
- Oct 1, 2026
- Inventors
- 9
- Claims
- 20
Classified under
H10B 12/315 Electricity & electronicsH10B 12/09 Electricity & electronicsH10B 12/482 Electricity & electronicsH10B 12/50 Electricity & electronicsH10D 30/025 Electricity & electronicsH10D 30/63 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.