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Samsung patents memory design that trims extra wiring for faster data writes

Patent drawing
Patent drawing from the official filing.

Samsung describes an embedded memory chip that uses a special switch to connect long, shared data lines to shorter, local lines only when writing data. This setup stacks the main data line above the local one to save space inside the chip.

Why it mattersThis design could help manufacturers pack more memory into small chips used in phones and computers without slowing down data transfers.

In the filing’s own words

An embedded memory device includes a bit cell array connected between a bitline and a complementary bitline, a cropping cell connected between the bitline and the complementary bitline, a global bitline connected to the bitline in a write operation, and a complementary global bitline connected to the complementary bitline in the write operation. The global bitline is implemented as an upper metal member. The bitline is implemented as a lower metal member disposed below the upper metal member. The cropping cell is configured to operate in response to a crop wordline signal and, in the write operation, electrically connect the global bitline to the bitline and electrically connect the complementary global bitline to the complementary bitline in response to the crop wordline signal having a first level.

What exactly they claim (claim 1)

1. An embedded memory device comprising: a bit cell array connected between a bitline and a complementary bitline; a cropping cell connected between the bitline and the complementary bitline; a global bitline connected to the bitline in a write operation; and a complementary global bitline connected to the complementary bitline in the write operation, wherein the global bitline is implemented as an upper metal member, wherein the bitline is implemented as a lower metal member disposed below the upper metal member, and wherein the cropping cell is configured to operate in response to a crop wordline signal and, in the write operation, electrically connect the global bitline to the bitline and electrically connect the complementary global bitline to the complementary bitline in response to the crop wordline signal having a first level.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
EMBEDDED MEMORY DEVICE INCLUDING CROPPED BITLINE STRUCTURE AND OPERATING METHOD THEREOF
Publication number
US20260301805A1
Application number
19686721
Filed
May 24, 2026
Published
Oct 1, 2026
Inventors
5
Claims
20

Classified under

G11C 11/418 Physics & computingG11C 5/063 Physics & computingG11C 11/419 Physics & computing

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.