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Samsung patents memory chip that fixes bad rows using stored addresses

Patent drawing
Patent drawing from the official filing.

This filing describes a high bandwidth memory (HBM) chip that stores the locations of faulty rows in a fuse array. When the chip turns on, a control circuit reads these addresses to identify which specific row decoder blocks need adjustment, allowing the system to bypass or repair the defective areas.

Why it mattersThis improves the reliability of high-speed memory chips used in AI servers and graphics cards by automatically managing known hardware defects during startup.

In the filing’s own words

A memory device includes a row decoder including a plurality of row decoder blocks arranged in series, wherein the plurality of row decoder blocks are distinguished based on row addresses which the plurality of row decoder blocks take charge of; a repair address storage circuit including a fuse array in which a first plurality of faulty row addresses are stored; a repair control circuit including a plurality of repair control blocks arranged in series to correspond to the plurality of row decoder blocks; and a fuse tracking circuit configured to determine locations of row decoder blocks corresponding to a second plurality of faulty row addresses among the first plurality of faulty row addresses received from the repair address storage circuit and to control an operation of the row decoder based on the locations.

What exactly they claim (claim 1)

1. A high bandwidth memory (HBM) device comprising: a plurality of dies including a first die and a second die vertically stacked on the first die, wherein the first die comprises: a repair address storage circuit comprising a fuse array in which a faulty row address is stored; a repair control circuit configured to receive the faulty row address from the repair address storage circuit based on the HBM device being turned on; a row decoder including a row decoder block corresponding to the faulty row address; and a control circuit configured to determine a location of the row decoder block and to generate a control signal for controlling an operation of the row decoder based on the determined location.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
MEMORY DEVICE AND OPERATING METHOD THEREOF
Publication number
US20260300109A1
Application number
19699776
Filed
Jun 5, 2026
Published
Oct 1, 2026
Inventors
2
Claims
3

Classified under

G06F 11/1666 Physics & computingG06F 11/073 Physics & computingG06F 11/0793 Physics & computingG06F 11/16 Physics & computingG06F 11/1612 Physics & computingG06F 11/2094 Physics & computing

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.