Samsung patents chip-making chamber with two different gas zones

1. A method of processing substrates, the method comprising: preparing a substrate processing apparatus including a substrate support configured to support a plurality of substrates, a chamber sidewall surrounding at least a side surface of the substrate support, an upper plate disposed above the substrate support, and a plurality of process regions between the substrate support and the upper plate; loading the plurality of substrates onto the substrate support of the substrate processing apparatus; forming a material layer on each of the plurality of substrates while moving positions of the plurality of substrates in the substrate processing apparatus; and unloading the plurality of substrates, each having the material layer formed thereon, from the substrate processing apparatus, wherein the upper plate and the substrate support collectively at least partially define the plurality of process regions, wherein the upper plate includes a pretreatment process plate portion and a deposition process plate portion, wherein the upper plate and the substrate support collectively at least partially define the plurality of process regions to include a pretreatment process region between the pretreatment process plate portion and the substrate support, the pretreatment process region having a first height, and a deposition process region between the deposition process plate portion and the substrate support, the deposition process region having a second height greater than the first height, wherein the deposition process plate portion includes a first deposition process gas nozzle configured to inject a deposition process gas into the deposition process region, wherein the chamber sidewall includes a second deposition process gas nozzle configured to inject the deposition process gas toward an upper region of the deposition process region, and wherein the second deposition process gas nozzle is higher than a middle of the deposition process region between an upper end of the deposition process region and a lower end of the deposition process region, and is closer to the upper end of the deposition process region than the middle of the deposition process region.