Samsung patents chip design with taller barriers between transistor channels
Samsung describes a semiconductor structure where two groups of transistor channels are separated by a physical barrier that is taller than the channels themselves. A gate electrode, which controls the flow of electricity, is placed over the channels and touches this taller barrier. This arrangement helps isolate the different parts of the chip from each other.
In the filing’s own words
An example semiconductor device comprises an active pattern on a substrate, a first channel structure and a second channel structure spaced apart from each other on the active pattern, a gate electrode on the first channel structure and the second channel structure and a separation structure provided between the first channel structure and the second channel structure. Each of the first channel structure and the second channel structure includes a plurality of semiconductor patterns. A level of an upper surface of the separation structure is higher than that of an upper surface of an uppermost semiconductor pattern among the plurality of semiconductor patterns. The gate electrode provided between the plurality of semiconductor patterns is in contact with the separation structure.
What exactly they claim (claim 1)
1. A semiconductor device comprising: an active pattern on a substrate; a first channel structure and a second channel structure spaced apart from each other on the active pattern; a gate electrode on the first channel structure and the second channel structure; and a separation structure between the first channel structure and the second channel structure, wherein the first channel structure includes a first plurality of semiconductor patterns and the second channel structure includes a second plurality of semiconductor patterns, wherein an upper surface of the separation structure is higher than an upper surface of an uppermost semiconductor pattern among the first plurality of semiconductor patterns and the second plurality of semiconductor patterns, and wherein the gate electrode contacts the separation structure.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number
- US20260293304A1
- Application number
- 19327099
- Filed
- Sep 12, 2025
- Published
- Sep 24, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10D 84/852 Electricity & electronicsH10D 84/0167 Electricity & electronicsH10D 84/017 Electricity & electronicsH10D 84/0188 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.