Samsung patents chip design with angled transistor parts
Samsung describes a semiconductor device where one part of the transistor has a slanted side wall. This design uses a material with a different atomic spacing in one section to improve the chip's structure.
In the filing’s own words
A semiconductor device including a semiconductor substrate including a first active region and a second active region, a first source/drain region provided in the first active region, a second source/drain region provided in the second active region, a first gate structure on the first active region, a semiconductor layer having a lattice constant different from the semiconductor substrate on the second active region, and a second gate structure on the semiconductor layer, wherein the first source/drain region includes a first lower portion and a first upper portion on the first lower portion, wherein the first lower portion includes a first sidewall facing the second source/drain region, and wherein the first upper portion includes a second sidewall connected to the first sidewall of the first lower portion and inclined with the first sidewall.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a semiconductor substrate including a first active region and a second active region; a first source/drain region provided in the first active region; a second source/drain region provided in the second active region; a first gate structure disposed on the first active region; a semiconductor layer having a lattice constant different from a lattice constant of the second active region of the semiconductor substrate and disposed on the second active region; and a second gate structure disposed on the semiconductor layer, wherein the first source/drain region includes a first lower portion and a first upper portion disposed on the first lower portion, wherein the first lower portion includes a first sidewall facing the second source/drain region, and wherein the first upper portion includes a second sidewall connected to the first sidewall of the first lower portion and inclined with the first sidewall.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE
- Publication number
- US20260293298A1
- Application number
- 19396474
- Filed
- Nov 21, 2025
- Published
- Sep 24, 2026
- Inventors
- 10
- Claims
- 20
Classified under
H10D 84/8314 Electricity & electronicsH10D 62/832 Electricity & electronicsH10D 64/669 Electricity & electronicsH10D 84/8311 Electricity & electronicsH10D 84/83135 Electricity & electronicsH10B 12/50 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.