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Samsung patents layered silicon structure for semiconductor devices

Samsung has filed a patent for a specific arrangement of materials used in making chips. The design stacks an amorphous silicon layer, a metal silicide layer, and a metal nitride layer on top of each other.

Why it mattersThis is a routine improvement to semiconductor manufacturing materials that helps control how electrical signals move through tiny circuits.

In the filing’s own words

Provided are a laminated structure including a metal silicide, a method of manufacturing the laminated structure, and a semiconductor device including the laminated structure. The laminated structure includes an amorphous silicon layer, a metal silicide layer provided on the amorphous silicon layer, and a metal nitride layer provided on the metal silicide layer.

What exactly they claim (claim 1)

1. A laminated structure comprising: an amorphous silicon layer; a metal silicide layer on the amorphous silicon layer; and a metal nitride layer on the metal silicide layer such that the metal silicide layer is between the metal nitride layer and the amorphous silicon layer.

Facts

Company: Samsung (Samsung Electronics Co., Ltd.)
Official title: LAMINATED STRUCTURE INCLUDING METAL SILICIDE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE LAMINATED STRUCTURE
Publication number: US20260293268A1
Application number: 19564736
Filed: Mar 12, 2026
Published: Sep 24, 2026
Inventors: 7
Claims: 20

Classified under

H10D 64/62 Electricity & electronicsH10D 64/0112 Electricity & electronicsH10W 20/066 Electricity & electronicsH10W 20/4446 Electricity & electronicsH10W 20/4451 Electricity & electronics

Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.