Samsung patents chip design with two-layer insulation for better contact
Samsung describes a semiconductor structure where the insulating layer covering the chip's gate and source/drain areas is made of two different materials. The first material covers the bottom and lower sides of the second material, leaving the upper sides exposed to help form electrical connections.
In the filing’s own words
A semiconductor device includes active patterns extending in a first direction and spaced apart from one another in a second direction; a gate electrode on the active patterns and extending in the second direction; a source/drain pattern on at least one side of the gate electrode; a source/drain contact on the source/drain pattern; an isolation insulating film on the gate electrode and the source/drain contact; and a source/drain via in the isolation insulating film and on the source/drain contact, wherein the isolation insulating film includes a first film and a second film on the first film, wherein the first film and the second film include different materials, and wherein the first film extends along and on a bottom surface and a lower portion of a sidewall of the second film, and does not extend along and on an upper portion of the sidewall of the second film.
What exactly they claim (claim 1)
1. A semiconductor device comprising: active patterns extending in a first direction and spaced apart from one another in a second direction; a gate electrode on the active patterns and extending in the second direction; a source/drain pattern on at least one side of the gate electrode; a source/drain contact on the source/drain pattern; an isolation insulating film on the gate electrode and the source/drain contact; and a source/drain via in the isolation insulating film and on the source/drain contact, wherein the isolation insulating film includes a first film and a second film on the first film, wherein the first film and the second film include different materials, and wherein the first film extends along and on a bottom surface and a lower portion of a sidewall of the second film, and does not extend along and on an upper portion of the sidewall of the second film.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE INCLUDING ISOLATION INSULATING FILM AND SOURCE/DRAIN CONTACT
- Publication number
- US20260293260A1
- Application number
- 19571417
- Filed
- Mar 18, 2026
- Published
- Sep 24, 2026
- Inventors
- 5
- Claims
- 20
Classified under
H10D 64/251 Electricity & electronicsH10D 30/501 Electricity & electronicsH10D 64/0111 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.