Samsung patents chip design using special electric materials
Samsung describes a semiconductor device where the channel, which carries electrical signals, is surrounded by specific layers of material. These layers include ferroelectric or antiferroelectric substances, which can store electrical charge, separated by an insulating layer.
In the filing’s own words
A semiconductor device according to embodiments includes a substrate, a gate stack structure including interlayer insulation layers and gate electrodes alternately stacked on the substrate, a channel structure including a channel layer extending in a first direction perpendicular to one surface of the substrate and connected to the substrate, the channel structure penetrating the gate stack structure and a multi-layered structure extending in the first direction and including a first layer located between the channel layer and the gate electrode, a second layer located between the first layer and the gate electrode, and a third layer located between the first layer and the second layer, wherein each of the first layer and the second layer includes a ferroelectric material or an antiferroelectric material, and the third layer includes at least one insulation layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate; a gate stack structure including interlayer insulation layers and gate electrodes alternately stacked on the substrate; a channel structure including a channel layer extending in a first direction perpendicular to one surface of the substrate and connected to the substrate, the channel structure penetrating the gate stack structure; and a multi-layered structure extending in the first direction and including a first layer located between the channel layer and the gate electrode, a second layer located between the first layer and the gate electrode, and a third layer located between the first layer and the second layer, wherein each of the first layer and the second layer includes a ferroelectric material or an antiferroelectric material, and the third layer includes at least one insulation layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Publication number
- US20260293148A1
- Application number
- 19358367
- Filed
- Oct 14, 2025
- Published
- Sep 24, 2026
- Inventors
- 1
- Claims
- 20
Classified under
H10B 51/30 Electricity & electronicsH10B 51/20 Electricity & electronicsH10B 51/40 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.