Samsung patents vertical memory cells with indium-based anti-oxidation layers
Samsung describes a semiconductor design where vertical memory cells sit on top of horizontal bit lines. The filing details a protective layer made of indium oxide mixed with elements like magnesium or nitrogen to prevent oxidation between the cell and the line.
In the filing’s own words
A semiconductor device including bit lines arranged on a substrate and extending in a first horizontal direction, an active pattern that extends in a vertical direction on each of the bit lines and includes a first end facing the bit lines and a second end opposite to the first end, a cell capacitor arranged on the second end of the active pattern, and an anti-oxidation film pattern arranged between the first end of the active pattern and each of the bit lines and extending in the first horizontal direction on a top surface of each of the bit lines, wherein the anti-oxidation film pattern includes an oxide semiconductor including indium, and a first dopant included in the oxide semiconductor, and the first dopant includes at least one of magnesium (Mg), tantalum (Ta), fluorine (F), or nitrogen (N).
What exactly they claim (claim 1)
1. A semiconductor device comprising: bit lines arranged on a substrate and extending in a first horizontal direction; an active pattern extending in a vertical direction on each of the bit lines and including a first end facing the bit lines and a second end opposite to the first end; a cell capacitor arranged on the second end of the active pattern; and an anti-oxidation film pattern arranged between the first end of the active pattern and each of the bit lines and extending in the first horizontal direction on a top surface of each of the bit lines, wherein: the anti-oxidation film pattern includes an oxide semiconductor including indium and a first dopant, and the first dopant includes at least one of magnesium (Mg), tantalum (Ta), fluorine (F), or nitrogen (N).
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICES INCLUDING VERTICAL CHANNEL TRANSISTORS
- Publication number
- US20260293094A1
- Application number
- 19553678
- Filed
- Mar 2, 2026
- Published
- Sep 24, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10B 12/315 Electricity & electronicsH10B 12/05 Electricity & electronicsH10B 12/50 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.