Samsung patents layered chip design with porous insulation for better reliability
Samsung describes a semiconductor structure that uses a porous insulating layer to hold electrical connections. A thin barrier layer sits on top of this structure to separate it from a second layer of connections above.
In the filing’s own words
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device may include a first interlayer insulating film containing therein a plurality of pores, a first line structure in the first interlayer insulating film, an inserted insulating film extending along and on a upper surface of the first interlayer insulating film and in contact with the first interlayer insulating film, a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the first line structure, a second interlayer insulating film on the barrier insulating film and a second line structure disposed in the second interlayer insulating film and connected to the first line structure.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a first interlayer insulating film containing therein a plurality of pores; a first line structure in the first interlayer insulating film; an inserted insulating film extending along an upper surface of the first interlayer insulating film and in contact with the first interlayer insulating film; a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the first line structure; a second interlayer insulating film on the barrier insulating film; and a second line structure in the second interlayer insulating film and connected to the first line structure, wherein the first line structure includes a barrier conductive film and a filling conductive film on the barrier conductive film, and wherein the inserted insulating film contacts an upper surface of the barrier conductive film.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number
- US20260282890A1
- Application number
- 19666962
- Filed
- May 4, 2026
- Published
- Sep 17, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10W 20/47 Electricity & electronicsH10W 20/056 Electricity & electronicsH10W 20/072 Electricity & electronicsH10W 20/096 Electricity & electronicsH10W 20/42 Electricity & electronicsH10W 20/425 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.