Samsung patents chip etching tool that adjusts gas mix in real time
Samsung describes a machine for making computer chips that uses plasma to carve away unwanted material from a thin slice of silicon. It includes a sensor that constantly checks the exact mix of gases being used and a computer that adjusts the process to keep the carving precise.
In the filing’s own words
A substrate processing apparatus includes: a chamber body; a substrate support provided in the chamber body; a gas supplier configured to supply a process gas into the chamber body; a plasma generator configured to generate plasma from the process gas; a showerhead configured to supply, onto a substrate, a process etchant generated from the plasma, the process etchant including a first etchant and a second etchant; a first analyzer which is connected to the chamber body and configured to measure a composition rate of the process etchant; and a controller which is connected to at least one of the chamber body, the gas supplier, the plasma generator, and the showerhead, and configured to perform a process control based on a process result according to the composition rate of the process etchant measured by the first analyzer.
What exactly they claim (claim 1)
1. A substrate processing apparatus comprising: a chamber body; a substrate support provided in the chamber body; a gas supplier configured to supply a process gas into the chamber body; a plasma generator configured to generate plasma from the process gas; a showerhead configured to supply, onto a substrate, a process etchant generated from the plasma, the process etchant comprising a first etchant and a second etchant; a first analyzer which is connected to the chamber body and configured to measure a composition rate of the process etchant; and a controller which is connected to at least one of the chamber body, the gas supplier, the plasma generator, and the showerhead, and configured to perform a process control based on a process result according to the composition rate of the process etchant measured by the first analyzer.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number
- US20260282797A1
- Application number
- 19632786
- Filed
- Mar 30, 2026
- Published
- Sep 17, 2026
- Inventors
- 6
- Claims
- 20
Classified under
H10P 72/0421 Electricity & electronicsH01J 37/32357 Electricity & electronicsH01J 37/32449 Electricity & electronicsH10P 14/432 Electricity & electronicsH10P 50/242 Electricity & electronicsH01J 2237/334 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.