Samsung patents chip-making step that heats a layer to split it into two parts
Samsung describes a method for making semiconductor chips that involves heating a specific insulating layer to between 650 and 850 degrees Celsius. This heating process causes the layer to separate into two distinct regions, which helps form the gate structure of the chip.
In the filing’s own words
A method of manufacturing a semiconductor device includes forming a gate interface film on a substrate, forming a preliminary dielectric film structure including a metal silicon oxide on the gate interface film, forming a dielectric film structure including a phase-separated first region and a second region by heat-treating the preliminary dielectric film structure at a temperature within a range of about 650° C. to about 850° C. in a nitrogen atmosphere, forming a gate electrode on the preliminary dielectric film structure, and forming a capping insulating film on the gate electrode, wherein the heat-treating includes heat-treating at a first temperature, and heat-treating at a second temperature that is different from the first temperature.
What exactly they claim (claim 1)
1. A method of manufacturing a semiconductor device, the method comprising: forming a gate interface film on a substrate; forming, on the gate interface film, a preliminary dielectric film structure including a metal silicon oxide; forming a dielectric film structure including a phase-separated first region and a second region by heat-treating the preliminary dielectric film structure at a temperature within a range of about 650 ° C. to about 850° C. in a nitrogen atmosphere; forming a gate electrode on the preliminary dielectric film structure; and forming a capping insulating film on the gate electrode, wherein the heat-treating of the preliminary dielectric film structure includes: heat-treating at a first temperature; and heat-treating at a second temperature that is different from the first temperature.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THERMAL TREATING A DIELECTRIC FILM
- Publication number
- US20260282778A1
- Application number
- 19561052
- Filed
- Mar 9, 2026
- Published
- Sep 17, 2026
- Inventors
- 6
- Claims
- 20
Classified under
H10P 14/6544 Electricity & electronicsH10D 64/01332 Electricity & electronicsH10P 95/90 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.