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Samsung patents image sensor design that shares electrical connections

Samsung describes a structure for an image sensor chip where a single electrical contact connects two different parts of the circuit. This design links a gate electrode in one pixel area to a connection wire in a neighboring area, potentially simplifying the chip's layout.

Why it mattersThis is a specific engineering improvement to how image sensor pixels are built, which could lead to slightly more efficient camera chips in future phones or cameras.

In the filing’s own words

Disclosed is an image sensor. The image sensor includes a semiconductor substrate, a PD isolation pattern disposed in the semiconductor substrate and defining first and second PD regions, a first floating diffusion region provided in the semiconductor substrate of the first PD region, an interconnection conductive pattern disposed on a first surface of the semiconductor substrate and contacting the first floating diffusion region, a source follower gate electrode provided in the second PD region, the source follower gate electrode including a first portion disposed on the semiconductor substrate of the second PD region and a second portion extended from the first portion and disposed on the PD isolation pattern, the second portion being adjacent to the interconnection conductive pattern, and a common contact plug commonly connected to the source follower gate electrode and the interconnection conductive pattern.

What exactly they claim (claim 1)

1. An image sensor, comprising: a semiconductor substrate; a PD isolation pattern disposed in the semiconductor substrate and defining first and second PD regions; a first floating diffusion region provided in the semiconductor substrate of the first PD region; an interconnection conductive pattern disposed on a first surface of the semiconductor substrate and contacting the first floating diffusion region; a source follower gate electrode provided in the second PD region, the source follower gate electrode including a first portion disposed on the semiconductor substrate of the second PD region and a second portion extended from the first portion and disposed on the PD isolation pattern, the second portion being adjacent to the interconnection conductive pattern; and a common contact plug commonly connected to the source follower gate electrode and the interconnection conductive pattern.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
IMAGE SENSOR
Publication number
US20260282588A1
Application number
19405889
Filed
Dec 2, 2025
Published
Sep 17, 2026
Inventors
5
Claims
20

Classified under

H10F 39/811 Electricity & electronicsH10F 39/014 Electricity & electronicsH10F 39/182 Electricity & electronicsH10F 39/80373 Electricity & electronicsH10F 39/8053 Electricity & electronicsH10F 39/8063 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.