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Samsung patents image sensor design with stepped isolation trenches

Samsung describes a method for building image sensors by creating deep trenches between pixel areas to separate them. The filing details filling these trenches with a semiconductor material that has a specific stepped shape, where the outer walls are taller than the inner fill. This structure is designed to improve the isolation between adjacent pixels in the sensor.

Why it mattersThis is a routine improvement to the physical structure of camera sensors, which may help maintain image quality as sensors get smaller and more densely packed.

In the filing’s own words

An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regions of the plurality of pixel regions and penetrating the substrate, wherein the deep device isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion.

What exactly they claim (claim 1)

1. A method of fabricating an image sensor, comprising: providing a substrate including a plurality of pixel regions, a first surface, and a second surface opposite; forming a deep trench extending from the first surface into the substrate; forming a sidewall insulating layer covering an inner surface of the deep trench; and forming a preliminary semiconductor pattern on the sidewall insulating layer, wherein the preliminary semiconductor pattern covers a portion of the deep trench, wherein the preliminary semiconductor pattern comprises a first portion and a second portion, wherein the first portion is provided in the deep trench and covers the sidewall insulating layer, wherein the second portion is provided on the first portion and fills a lower portion of the deep trench, and wherein a top surface of the first portion is located at a height higher than a top surface of the second portion.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Publication number
US20260282585A1
Application number
19678321
Filed
May 15, 2026
Published
Sep 17, 2026
Inventors
5
Claims
8

Classified under

H10F 39/807 Electricity & electronicsH10F 39/011 Electricity & electronicsH10F 39/199 Electricity & electronicsH10F 39/811 Electricity & electronicsH10F 39/8053 Electricity & electronicsH10F 39/8063 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.