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Samsung patents chip layer that stops unwanted material mixing

Samsung describes a method for making computer chips with a special layer placed between the main circuit parts and the base. This layer is made of silicon-germanium with a high concentration of germanium to act as a barrier. It prevents the materials from mixing in ways that could damage the chip's performance.

Why it mattersThis is a routine improvement in chip manufacturing that helps maintain the quality of the tiny structures inside processors.

In the filing’s own words

A semiconductor device includes a substrate including an active pattern; a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are stacked to be spaced apart from each other; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode on the plurality of semiconductor patterns; and a blocking layer between the source/drain pattern and the active pattern, wherein the source/drain pattern includes a protruding side surface protruding toward the semiconductor patterns, the blocking layer includes silicon-germanium (SiGe), and a germanium concentration of the blocking layer is higher than a germanium concentration of the source/drain pattern.

What exactly they claim (claim 1)

1. A method of manufacturing a semiconductor device, comprising: forming a stacking pattern including sacrificial layers and active layers sequentially stacked on an active pattern; patterning the sacrificial layers and the active layers to form semiconductor patterns and a recess on the active pattern; forming a blocking layer on a bottom surface of the recess; and forming a source/drain pattern on the recess, wherein the source/drain pattern includes side surfaces protruding toward respective ones of the semiconductor patterns, the blocking layer includes silicon-germanium (SiGe), and a concentration of germanium (Ge) in the blocking layer is greater than a concentration of germanium (Ge) in the source/drain pattern.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR DEVICE HAVING A SIGE BLOCKING LAYER AND METHOD OF FABRICATING THE SAME
Publication number
US20260282474A1
Application number
19673371
Filed
May 11, 2026
Published
Sep 17, 2026
Inventors
6
Claims
20

Classified under

H10D 62/149 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 62/151 Electricity & electronicsH10D 84/017 Electricity & electronicsH10D 84/038 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.