Samsung patents memory structure with new contact plug design
Samsung describes a semiconductor layout for a peripheral word line, which is a control line in memory chips. The design uses a specific arrangement of insulating layers and metal contacts to connect the word line to the rest of the chip.
In the filing’s own words
A semiconductor device includes a peripheral word line on a substrate, a lower dielectric pattern covering the peripheral word line and including a first part covering a lateral surface of the peripheral word line and a second part covering a top surface of the peripheral word line, a contact plug penetrating the first part and the second part, and a filling pattern penetrating at least a portion of the second part. The contact plug includes a contact pad on a top surface of the lower dielectric pattern and a through plug penetrating the first and second parts. The filling pattern surrounds a lateral of the contact pad of the contact plug, the first part and the second part include the same material, the peripheral word line includes a metal-containing pattern, and the second part is in direct contact with a top surface of the metal-containing pattern.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a substrate; a peripheral word line on the substrate; a lower dielectric pattern on the substrate and covering the peripheral word line, the lower dielectric pattern including a first part that covers a lateral surface of the peripheral word line and a second part that covers a top surface of the peripheral word line; a contact plug on one side of the peripheral word line, the contact plug penetrating the first part and the second part of the lower dielectric pattern; and a filling pattern on the second part of the lower dielectric pattern, the filling pattern penetrating at least a portion of the second part, wherein the contact plug includes: a contact pad on a top surface of the lower dielectric pattern; and a through plug that penetrates the first part and the second part of the lower dielectric pattern in a first direction perpendicular to a top surface of the substrate, the through plug being connected to the substrate, wherein the filling pattern surrounds a lateral of the contact pad of the contact plug, wherein the first part and the second part include the same material, wherein the peripheral word line includes a metal-containing pattern, and wherein the second part of the lower dielectric pattern is in direct contact with a top surface of the metal-containing pattern.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- PERIPHERAL MEMORY WORD LINE STRUCTURE
- Publication number
- US20260282345A1
- Application number
- 19676428
- Filed
- May 13, 2026
- Published
- Sep 17, 2026
- Inventors
- 5
- Claims
- 9
Classified under
H10B 12/50 Electricity & electronicsH10B 12/0335 Electricity & electronicsH10B 12/09 Electricity & electronicsH10B 12/315 Electricity & electronicsH10B 12/488 Electricity & electronicsH10W 20/425 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.