Samsung patents memory chip design with air gaps and protective contacts
Samsung describes a semiconductor device layout that uses air gaps and support patterns to stabilize the structure. The design includes specific contact points with protective layers that sit higher than the main connection point to shield the underlying components.
In the filing’s own words
A semiconductor device includes a bit line extending in a first direction, a word line extending in a second direction intersecting the first direction, a plurality of semiconductor patterns on the bit line and extending in a third direction orthogonal to the first direction and the second direction and spaced apart from each other, a plurality of connection structures respectively disposed on corresponding semiconductor patterns among the plurality of semiconductor patterns, a support pattern between the connection structures, and an air gap below the support pattern. Each of the connection structures comprises a storage node contact and a protection pattern in contact with a sidewall of the storage node contact. A level of a bottom surface of the protection pattern is higher than a level of a bottommost surface of the storage node contact.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a bit line extending in a first direction; a word line extending in a second direction intersecting the first direction; a plurality of semiconductor patterns on the bit line and extending in a third direction orthogonal to the first direction and the second direction and spaced apart from each other; connection structures respectively disposed on a corresponding semiconductor pattern among the plurality of semiconductor patterns; a support pattern between the connection structures; and an air gap below the support pattern, wherein each of the connection structures comprises: a storage node contact, and a protection pattern in contact with at least a portion of a sidewall of the storage node contact, wherein a level of a bottom surface of the protection pattern is higher than a level of a bottommost surface of the storage node contact.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE WITH AIR GAP AND SUPPORT PATTERN AND METHOD OF FORMING THE SAME
- Publication number
- US20260282339A1
- Application number
- 19376248
- Filed
- Oct 31, 2025
- Published
- Sep 17, 2026
- Inventors
- 3
- Claims
- 20
Classified under
H10B 12/485 Electricity & electronicsH10B 12/0335 Electricity & electronicsH10B 12/315 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.