Samsung patents memory chip design that fixes bad columns automatically
Samsung describes a memory system that uses spare cells to replace faulty ones in a specific column. It works by comparing the address of a bad cell with stored data to decide when to swap in a working backup.
In the filing’s own words
A memory device, includes a memory cell array having a plurality of normal memory cells and a plurality of redundant memory cells, a fuse array configured to store a first column address of a first memory cell, and a column decoder configured to receive the first column address, the column decoder comprising a first column repair circuit configured to output a first column repair signal based on a first enable signal and a first address match signal, the first column repair circuit including a first latch array having a plurality of latch elements and configured to receive the first column address and output first output bits, a first compare logic configured to receive and compare a second column address with the first output bits and output the first address match signal, and a first combinational logic configured to output the first enable signal indicating whether to repair the first memory cell.
What exactly they claim (claim 1)
1. A memory device, comprising: a memory cell array having a plurality of normal memory cells and a plurality of redundant memory cells; a fuse array configured to store a first column address of a first memory cell; and a column decoder configured to receive the first column address, wherein the column decoder comprises a first column repair circuit configured to output a first column repair signal based on a first enable signal and a first address match signal, wherein the first column repair circuit includes: a first latch array having a plurality of latch elements and configured to receive the first column address and output first output bits, a first compare logic configured to receive the first output bits and a second column address and compare the second column address with the first output bits and output the first address match signal, and a first combinational logic configured to output the first enable signal based on the first output bits, the first enable signal indicating whether to repair the first memory cell.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- MEMORY SYSTEMS AND DEVICES HAVING ENHANCED COLUMN REPAIR CAPABILITY AND METHODS OF OPERATING SAME
- Publication number
- US20260279485A1
- Application number
- 19679517
- Filed
- May 15, 2026
- Published
- Sep 17, 2026
- Inventors
- 2
- Claims
- 20
Classified under
G11C 29/76 Physics & computingG11C 29/787 Physics & computingG11C 29/789 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.